irg4pc50w.pdf

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PD - 91657B
IRG4PC50W
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
C
V
CES
= 600V
G
E
V
CE(on) max.
=
2.30V
@V
GE
= 15V, I
C
= 27A
n-channel
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >300 kHz)
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
600
55
27
220
220
± 20
170
200
78
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.64
–––
40
–––
Units
°C/W
g (oz)
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1
2/7/2000
IRG4PC50W
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)CES
∆V
(BR)CES
/∆T
J
V
CE(ON)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
I
GES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
600
—
—
V
V
GE
= 0V, I
C
= 250µA
Emitter-to-Collector Breakdown Voltage
T
18
—
—
V
V
GE
= 0V, I
C
= 1.0A
Temperature Coeff. of Breakdown Voltage — 0.41 —
V/°C V
GE
= 0V, I
C
= 5.0mA
— 1.93 2.3
I
C
= 27A
V
GE
= 15V
Collector-to-Emitter Saturation Voltage
— 2.25 —
I
C
= 55A
See Fig.2, 5
V
— 1.71 —
I
C
= 27A , T
J
= 150°C
Gate Threshold Voltage
3.0
—
6.0
V
CE
= V
GE
, I
C
= 250µA
Temperature Coeff. of Threshold Voltage
—
-11
— mV/°C V
CE
= V
GE
, I
C
= 1.0mA
Forward Transconductance
U
27
41
—
S
V
CE
=
100 V, I
C
= 27A
—
—
250
V
GE
= 0V, V
CE
= 600V
Zero Gate Voltage Collector Current
µA
—
—
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
—
— 5000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
Gate-to-Emitter Leakage Current
—
— ±100
nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
180 270
I
C
= 27A
24
36
nC
V
CC
= 400V
See Fig.8
63
95
V
GE
= 15V
46
—
33
—
T
J
= 25°C
ns
120 180
I
C
= 27A, V
CC
= 480V
57
86
V
GE
= 15V, R
G
= 5.0Ω
0.08 —
Energy losses include "tail"
0.32 —
mJ See Fig. 9, 10, 14
0.40 0.5
31
—
T
J
= 150°C,
43
—
I
C
= 27A, V
CC
= 480V
ns
210
—
V
GE
= 15V, R
G
= 5.0Ω
62
—
Energy losses include "tail"
1.14 —
mJ See Fig. 10,11, 14
13
—
nH
Measured 5mm from package
3700 —
V
GE
= 0V
260
—
pF
V
CC
= 30V
See Fig. 7
68
—
ƒ = 1.0MHz
Q
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 5.0Ω,
(See fig. 13a)
T
Pulse width
≤
80µs; duty factor
≤
0.1%.
U
Pulse width 5.0µs, single shot.
S
Repetitive rating; pulse width limited by maximum
junction temperature.
2
www.irf.com
IRG4PC50W
100
F o r b o th :
T ria n g u la r w a v e :
80
D uty cy cle: 50%
TJ = 125°C
T s ink = 90°C
G ate drive as s pecified
P o w e r D is s ip a tio n = 4 0 W
C la m p vo lta g e :
8 0 % o f ra te d
Load Current ( A )
60
S q u a re wa ve:
6 0 % o f ra te d
vo l ta g e
40
20
Ide a l d io de s
0
0.1
1
10
100
A
1000
f, Frequency (kHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
1000
1000
100
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
100
T = 150
°
C
J
T
J
= 25
°
C
T
J
= 150
°
C
T
J
= 25
°
C
10
10
1
1
V
= 15V
20µs PULSE WIDTH
GE
10
1
5
6
7
8
V
= 50V
5µs PULSE WIDTH
CC
9
10
11
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4PC50W
60
3.0
50
40
V
CE
, Collector-to-Emitter Voltage(V)
V
= 15V
80 us PULSE WIDTH
GE
Maximum DC Collector Current(A)
I
C
= 54 A
2.0
30
I
C
= 27 A
I
C
=13.5 A
20
10
0
25
50
75
100
125
150
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
Thermal Response (Z
thJC
)
0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.001
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
0.0001
0.001
0.01
P
DM
t
1
t
2
1
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC50W
8000
V
GE
, Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
6000
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 27A
16
Cies
4000
12
8
2000
C
oes
C
res
4
0
1
10
100
0
0
40
80
120
160
200
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.0
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
I
C
= 27A
10
5.0
Ω
R
G
= Ohm
V
GE
= 15V
V
CC
= 480V
I
C
=
54
A
2.0
1
I
C
=
27
A
I
C
=
13.5
A
1.0
0.0
0
10
20
30
40
50
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
, Gate
Resistance
Ω )
R
G
G
, Gate
Resistance
(
(Ohm)
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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